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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

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E.L.P.™ High Butt Loop Connectors ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors OCuLink Connectors

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(1-Output) LTC7893AUFDM 100 V Low IQ Synchronous Boost Controller for GaN FETs

(1-Output) LTC7893AUFDM 100 V Low IQ Synchronous Boost Controller for GaN FETs

Source:our siteTime:2024-12-21Views:

Product Description:The LTC7893AUFDM is a high-performance, boost DC-DC switched voltage regulator that drives all n-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages with output voltages up to 100V. The LTC7893 addr…

Product Description:

The LTC7893AUFDM is a high-performance, boost DC-DC switched voltage regulator that drives all n-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages with output voltages up to 100V. The LTC7893 addresses many of the challenges traditionally faced when using GaN FETs. Compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET) solutions, the LTC7893 simplifies application design without the need for protective diodes and other additional external components.


The LTC7893's gate drive voltage can be precisely adjusted in the range of 4V to 5.5V to optimize performance and allow the use of different GaN FETs and even logic-level MOSFETs. When the output is biased from the boost converter regulator, the LTC7893 can operate with an input power supply as low as 1V after startup.

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Features:

Fully optimized GaN drive technology for GaN FETs

Output voltage up to 100V

Wide VIN range: 4V to 60V, operating at voltages as low as 1V after starting

No Catch, Clamp, or Bootstrap diodes required

Internal intelligent bootstrap switch prevents overcharging of the high-side drive power supply

Resistor adjustable dead zone time

Separate the output gate driver for adjustable on and off strength of the driver

Precisely adjustable driver voltage and UVLO

Low working IQ: 15μA

Programmable frequency (100kHz to 3MHz)

Synchronizable frequency (100kHz to 3MHz)

Spread spectrum frequency modulation

28 pin (4mm x 5mm), side wettable, QFN package

AEC-Q100 certification for automotive applications


Applications:

Automotive and industrial power systems

Military avionics and medical systems

Telecommunication power system


ON NXH020P120MNF1PG Silicon Carbide MOSFET Half Bridge Modules Return to
column (Microchip) SoC FPGA: MPFS095TS-FCSG325I four 64-bit RV64GC application processing cores

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