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ON NXH020P120MNF1PG Silicon Carbide MOSFET Half Bridge Modules

ON NXH020P120MNF1PG Silicon Carbide MOSFET Half Bridge Modules

Source:our siteTime:2024-12-21Views:

ON NXH020P120MNF1PG Silicon Carbide MOSFET Half Bridge ModulesProduct Description of NXH020P120MNF1PGNXH020P120MNF1PG is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.Specifications of NXH0…

ON NXH020P120MNF1PG Silicon Carbide MOSFET Half Bridge Modules


Product Description of NXH020P120MNF1PG

NXH020P120MNF1PG is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.


Specifications of NXH020P120MNF1PG

Technology: SiC

Mounting Style: Press Fit

Package/Case: Module

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Id - Continuous Drain Current: 51 A

Rds On - Drain-Source Resistance: 30 mOhms

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 211 W

Fall Time: 8.4 ns

Rise Time: 8.8 ns

Typical Delay Time: 8.4 ns

Typical Turn-Off Delay Time: 105 ns

Typical Turn-On Delay Time: 44 ns


Feature of NXH020P120MNF1PG

20 m/1200 V SiC MOSFET Half Bridge

Thermistor

Options with Pre−applied Thermal Interface Material (TIM) andwithout Pre−applied TIM

Press−fit Pins


End Product of NXH020P120MNF1PG

Electric Vehicle Charger

Energy Storage System

Solar Inverter 3-phase

Uninterruptible Power Supply


Applications of NXH020P120MNF1PG

Solar Inverter

Uninterruptible Power Supplies

Electric Vehicle Charging Stations

Industrial Power


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