sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKB40N65EF5ATMA1
Data Manual:IKB40N65EF5ATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
Infineon's 650 V 40 A high-speed switch TRENCHSTOP™ 5, combined with the full current rating Rapid 1 fast pole soft anti-parallel diode in a D2Pak (TO263) package, redefines the "best-in-class" IGBT by offering extremely high efficiency for hard-switching applications.This new series is a major breakthrough in IGBT innovation to meet the future needs of the market for high efficiency. This new family represents a major breakthrough in IGBT innovation to meet future market demands for high efficiency.
Characterisation
650 V breakdown voltage
Comparison to Infineon's industry leading "HighSpeed 3" series
Qg factor 2.5 times lower
Switching loss factor reduced by a factor of 2
200 mV lower VCEsat
With Infineon's very fast silicon diode technology
COES/EOSS low
Mild positive temperature coefficient VCEsat
Vf temperature stabilisation
IKB40N65EF5ATMA1 Product Attributes
Series: TrenchStop™ 5
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Current - Collector Pulse (Icm): 160 A
Vce(on) at varying Vge, Ic (max): 2.1V @ 15V, 40A
Power - Max: 250 W
Switching Energy: 420µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 95 nC
Td (On/Off) at 25°C: Value 22ns/160ns
Test Conditions: 400V, 40A, 15 Ohm, 15V
Reverse Recovery Time (trr): 83 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Application Areas
Electric vehicle fast charging
Power Supplies
Solar system solutions
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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