sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Transistors
Brand:INFINEON
Particular Year:25+
Package:PG-HSOF-8
Delivery Date:New and Original
Stock: 2000pcs
IMT65R026M2H CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Features Of IMT65R026M2H
Excellent figures-of-merit (FOMs)
Best in class RDS(on)
Outstanding robustness
Flexible driving voltage range
Pin-to-pin compatible with all 8x8 FETs
Improved package interconnect with .XT
Tj,max=175°C
12k-cycle in TCoB
Benefits Of IMT65R026M2H
Enables BOM savings
Maximizes the system performance per
Highest reliability and longer lifetime
Enables top efficiency and power density
Small footprint to more power density
Most compact daughter card design
Fully leverages SiC in a small footprint
Applications Of IMT65R020M2H
Complete system solutions for smart TVs
Energy Storage Systems
Heating ventilation and air conditioning (HVAC)
Microinverter solutions
Power conversion
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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