Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

DIF065SIC030 is a silicon carbide (SiC) MOSFET from Diotec Semiconductor, part of its SiC power semiconductor product line. DIF065SIC030 uses a 4H-SiC crystalline substrate with wide band gap (about 3.2eV), high critical breakdown electric field (about 2.8MV /cm) and high thermal conductivity, suitable for high temperature, high pressure, high frequency applications ‌.

Technical parameter

Package/housing: TO-247-4

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 650 V

Id- Continuous drain current: 105 A

Rds On- drain-source on-resistance: 30 mOhms

Vgs - grid - source voltage: -4 V, + 18 V

Vgs TH-gate source threshold voltage: 4 V

Qg- Grid charge: 145 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Channel mode: Enhancement

Brand name: DIF065SIC030

Trademark: Diotec Semiconductor

Configuration: Single

Forward transconductance - Min: 38 S

Product: MOSFETs

Product type: SiC MOSFETS

Transistor type: 1 N-Channel

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