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DIF065SIC020 is a 650 V silicon carbide power MOSFET transistor, with wide band gap, high critical breakdown electric field, high thermal conductivity, high electron saturation drift speed and strong radiation resistance ‌. Due to the advantages of SiC materials, DIF065SIC020 is very suitable for high temperature, high pressure, high frequency, high power and other applications. It is particularly suitable for industrial equipment and automotive electronic systems that require high performance and reliability ‌.

Technical parameter

Package/housing: TO-247-4

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 650 V

Id- Continuous drain current: 150 A

Rds On- drain-source on-resistance: 20 mOhms

Vgs - grid - source voltage: -5 V, + 18 V

Vgs TH-gate source threshold voltage: 4 V

Qg- Grid charge: 236 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd- Power dissipation: 550 W

Channel mode: Enhancement

Brand name: DIF065SIC020

Configuration: Single

Descent time: 27 ns

Forward transconductance - Minimum: 42 S

Product type: SiC MOSFETS

Rise time: 136 ns

Transistor type: 1 N-Channel

Typical shutdown delay: 63 ns

Typical connection delay: 25 ns

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