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DIF120SIC053-AQ: SiC MOSFET Transistor - High Speed High Voltage (Power) Switch, TO-247-4

Model: DIF120SIC053-AQ

Package: TO-247-4

Type: SiC MOSFET Transistor

DIF120SIC053-AQ Product Attributes:

FET Type: N-Channel

Technology: SiCFET (Silicon Carbide)

Drain-Source Voltage (Vdss): 1200 V

Current at 25°C - Continuous Drain (Id): 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 18V

On Resistance (Max) at Different Id, Vgs: 53 mOhm @ 33A, 18V

Vgs(th) at different Id (max): 4V @ 9.5mA

Gate Charge (Qg) at Vgs (max): 121 nC @ 15 V

Input capacitance (Ciss) at varying Vds (max): 2070 pF @ 1000 V

Power Dissipation (max): 278 W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Through Hole

Package/Housing: TO-247-4

DIF120SIC053-AQ Product Features:

Silicon carbide wide band gap material

Large gap and creepage space

Kelvin source for fast switching and

reduced gate noise levels

Low on-resistance

Fast switching times

Low gate charge

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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• 6.Can the company issue an invoice?

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