sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:ST
Particular Year:25+
Package:HiP247-4
Delivery Date:New and original
Stock: 3000pcs
The SCTWA35N65G2V-4 is a 650V silicon carbide power MOSFET developed using ST's advanced and innovative 2nd generation SiC MOSFET technology. The device has a very low on-resistance per unit area and very good switching performance. These characteristics make the SCTWA35N65G2V-4 suitable for a variety of high-power applications such as industrial, lighting and control, power supplies and converters, energy production and distribution
Technical parameter
Product: SCTWA35N65G2V-4
Package/box: HiP-247-4
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 45 A
Rds On- drain-source on-resistance: 67 mOhms
Vgs TH-gate source threshold voltage: 5 V
Qg- Grid charge: 73 nC
Minimum operating temperature: -55 C
Maximum operating temperature: + 200 C
Pd- Power dissipation: 240 W
Channel mode: Enhancement
Configuration: Single
Descent time: 14 ns
Package: Tube
Product type: SiC MOSFETS
Rise time: 9 ns
Typical shutdown delay: 35 ns
Typical connection delay: 16 ns
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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