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The SCT040W65G3-4 is a silicon carbide power MOSFET with a drain-source breakdown voltage of 650V, a continuous drain current of 30A, and a typical on-resistance of 45mOhm in a HiP247-4 package ‌‌.

Using ST's advanced 3rd generation SiC MOSFET technology, the SCT040W65G3-4 features very low RDS(on) over the entire temperature range, combined with low capacitance and very high switching operating frequency, enabling improved application performance, increased frequency, energy efficiency, system size and weight reduction ‌.

In addition, the SCT040W65G3-4 has a very fast and robust built-in body diode capable of operating at junction temperatures up to 200°C, and has a source sensing pin for increased efficiency ‌.

Technical parameter

Product: SCT040W65G3-4

Package/Box: HiP247-4

Transistor polarity: : N-Channel

Number of channels: : 1 Channel

Vds- drain-source breakdown voltage: : 650 V

Id- Continuous drain current: : 30 A

Rds On- drain-source on-resistance: : 63 mOhms

Vgs - grid - source voltage: -10 V, + 22 V

Vgs TH-gate source threshold voltage: : 3 V

Qg- Grid charge: : 37.5nC

Minimum operating temperature: -55 C

Maximum operating temperature: : + 200 C

Pd- Power dissipation: : 240 W

Channel mode: : Enhancement

Configuration: : Single

Descent time: : 19 ns

Package: : Tube

Product: : SiC MOSFETS

Product type: SiC MOSFETS

Rise time: : 7.4ns

Typical shutdown delay: : 29.6 ns

Typical connection delay: : 13 ns

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