sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SDRAM Memory
Brand:INFINEON
Particular Year:25+
Package:TSOP-44
Delivery Date:New and Original
Stock: 2000pcs
CY7C1041G30-10ZSXI is a high-performance 4 Mbit CMOS fast static RAM with embedded ECC for industrial applications. With a density of 4 Mbit, it offers a parallel interface, operating at a speed of 10 ns. This FAST SRAM operates in a wide temperature range from -40°C to 85°C, with an operating voltage range of 2.2V to 3.6V. The device is available in single chip-enable option and multiple pin configurations, with a lead ball finish of Ni/Pd/Au. Additionally, it features an organization of 256K x 16 and includes an ERR pin to signal error-detection and correction events during read cycles. In conclusion, CY7C1041G30-10ZSXI provides high-density, high-speed, and reliable operation for industrial applications.
Specifications Of CY7C1041G30-10ZSXI
Memory Size:4 Mbit
Organisation:256 k x 16
Access Time:10 ns
Interface Type:Parallel
Supply Voltage - Max:3.6 V
Supply Voltage - Min:2.2 V
Supply Current - Max:45 mA
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 85 C
Unit Weight:453.250 mg
Feature Of CY7C1041G30-10ZSXI
High speed
Embedded ECC for single-bit error correction
Low active and standby currents
Operating voltage range: 2.2V to 3.6V
1.0-V data retention
TTL-compatible inputs and outputs
Applications Of CY7C1041G30-10ZSXI
Domestic robots
Industrial automation
Secondary power distribution system
Model
Brand
Package
Quantity
Describe
SK hynix
FBGA-200
1000
Mem-SDRAM-Lpddr4, 16Gb(2Gb), 2Chx16, 3733Mbps, FBGA-200 (15.1X10.1)mm X 1mm Max H
Kingston
FBGA-96
1000
Dynamic random access Memory Auto temp 4Gb 256Mx16 96 ball FBGA DDR3L 2133
Kingston
FBGA-96
2000
Dynamic random access Memory Auto temp 2Gb 128Mx16 96 ball FBGA DDR3L 2133
Kingston
FBGA-200
1000
Dynamic random access memory 16Gb 1024Mx16 200 ball LPDDR4 3733MHz
Kingston
FBGA-200
2000
Dynamic random access memory 32Gb 1024Mx32 200 ball LPDDR4x 4266MHz
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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