sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Diodes
Brand:INFINEON
Particular Year:25+
Package:PG-TO247-3
Delivery Date:New and original
Stock: 2000pcs
The IDW80C65D1 device is an 80A Rapid 1 switched emitter controlled silicon power diode in TO-247 advanced isolation package for 650V voltage environments . The device has the advantages of flexible design, high output power, low cooling effect, high reliability, and electrical isolation .
Feature description
1.35V Temperature stable forward Voltage (VF)
Extremely Soft - the factor that enables ultimate soft and low EMI filtering
The extremely low Irrm provides low on-off losses on the boost switch
Suitable for applications with switching frequencies between 18 kHz and 40 kHz
Key parameter
Product: IDW80C65D1
Package/housing: TO-247-3
Peak reverse voltage: 650 V
Maximum surge current: 320 A
If - Forward current: 80 A
Configuration: Dual
Recovery time: 77 ns
Vf - Forward voltage: 1.35V
Ir-reverse current: 40 uA
Minimum operating temperature: -40 C
Max. operating temperature: + 175 C
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO247-3
2000
Diode Array 1 Pair Common Cathode 650 V 15A Through Hole TO-247-3
INFINEON
PG-TO220-3
2000
Diode Array 1 Pair Common Cathode 650 V 15A Through Hole TO-220-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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