sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Single Tube
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
Description:
The IKW75N65ES5 is a 650 V hard switch TRENCHSTOP™ 5 S5 IGBT in the TO247 package, which is suitable for applications with switching frequencies between 10 kHz and 40 kHz, enabling high efficiency and faster time-to-market. Reduce circuit design complexity and optimize PCB bill of material costs.
Specifications:
Product: IKW75N65ES5
Technology: Si
Package/housing: TO-247-3
Installation style: Through Hole
Configuration: Single
Maximum collector-emitter voltage VCEO: 650 V
Collector-emitter saturation voltage: 1.42V
Maximum grid/emitter voltage: -20 V, 20 V
Continuous collector current at 25 C: 80 A
Pd-power dissipation: 395 W
Operating temperature: -40 °C to + 175°C
Series: TRENCHSTOP 5 S5
Package: Tube
Trademark: Infineon Technologies
Grid-emitter leakage current: 100 nA
Height: 20.7mm
Length: 15.87mm
Product type: IGBT Transistors
Applications:
• Resonant converter
• Uninterruptible power supply
• Welding converter
• Medium and high-end switching frequency converter
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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