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IMBF170R450M1XTMA1 1700V Trench Type Silicon Carbide MOSFET Transistors TO-263-8

Product Attributes:

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Id - Continuous Drain Current: 9.8 A

Rds On - Drain-Source Resistance: 450 mOhms

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V

Qg - Gate Charge: 11 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 107 W

Channel Mode: Enhancement

Fall Time: 24 ns

Forward Transconductance - Min: 0.9 S

Product Type: MOSFET

Rise Time: 20 ns

Product Description

IMBF170R450M1XTMA1 is 1700V CoolSiC™ Trench-type Silicon Carbide MOSFET Transistors in TO-263-7 Package.

Features

Extremely low switching losses

12 V / 0 V gate source voltage compatible with flyback controllers

Fully controllable dV/dt, optimized for EMI

Compatible with flyback controllers with 12 V / 0 V gate source voltage

SMD (surface mount) package with increased creepage distance and electrical clearance (> 7 mm)

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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• 6.Can the company issue an invoice?

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