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650V Transistors IMBG65R083M1HXTMA1 Silicon Carbide MOSFET Single Tube TO-263-8

Product Attributes Of IMBG65R083M1HXTMA1

FET Type: N-Channel

Technology: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss): 650 V

Current - Continuous Drain (Id) @ 25°C: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 18V

Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V

Vgs(th) (Max) @ Id: 5.7V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V

Vgs (Max): +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V

Power Dissipation (Max): 126W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: PG-TO263-7-12

Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Features Of IMBG65R083M1HXTMA1

Low Qrr and Qoss

Low switching losses

Commutationally robust fast body diodes

Advanced trench technology for excellent gate oxide reliability

XT interconnect technology for superior thermal performance

Enhanced avalanche capability

SMD package for direct integration to PCB

Sense pins for optimized switching performance

IMBG65R083M1HXTMA1 is Silicon Carbide MOSFET Single Tube, in a compact 7-pin SMD package, is designed to improve system performance, reduce size and increase reliability.

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