sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTHL020N090SC1
Data Manual:NTHL020N090SC1.pdf
Brand:ON
Particular Year:23+
Package:TO247-3
Delivery Date:New original
Stock: 3000pcs
The NTHL020N090SC1 is a 900V silicon carbide N-channel MOSFET with new technology that offers excellent switching performance and high reliability. This power MOSFET has a low on-resistance and a compact chip size that ensures low capacitance and low gate charge. SiC power MOSFETs offer many advantages, such as maximum efficiency, faster operating frequency, higher power density, lower EMI, and smaller system size. Typical applications include UPS, DC-DC converters, boost inverters, solar and power supplies.
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 900 V
Current at 25°C - Continuous Drain (Id) : 118A (Tc)
Drive voltage (Max Rds On, min Rds On) : 15V
On resistance (Max.) at different Id and Vgs: 28mm @ 60A, 15V
Vgs(th) (Max.) : 4.3V@20mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 196 NC-@15 V
Vgs (Max) : +19V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 4415 PF-@450 V
FET function: -
Power dissipation (Max.) : 503W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Supplier device package: TO-247-3
Package/housing: TO-247-3
Basic product number: NTHL020
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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