sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NVHL040N120SC1
Data Manual:NVHL040N120SC1.pdf
Brand:ON
Particular Year:23+
Package:TO247-3
Delivery Date:New original
Stock: 3000pcs
The NVHL040N120SC1 is a 1200V EliteSiC (silicon carbide) MOSFET in a TO-247-3 pass pin package with excellent switching performance and reliability, as well as low on-resistance TO ensure low capacitance and low gate charge. The system benefits that can be achieved with this MOSFET include increased efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 60A (Tc)
Drive voltage (Max Rds On, min Rds On) : 20V
On-resistance (Max.) at different ids and Vgs: 56 milliohm @ 35A, 20V
Vgs(th) (Max.) for different ids: 4, 3V@10mA
Gate charge (Qg) at different Vgs (Max.) : 106 N@20 V
Vgs (Max.) : +25V, -15V
Input capacitance (Ciss) at different Vds (Max.) : 1781 PF-@800 V
FET function: -
Power dissipation (Max.) : 348W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Supplier device package: TO-247-3
Package/housing: TO-247-3
Basic product number: NVHL040
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
NCV33202VDR2G
NCV33202VDR2G op-amps provides rail-to-rail operation on both the input and output. The inputs can be driven as high as 200mV beyond the supply rails without phase reversal on the outputs, and the output can swing within 50 mV of each rail. This rail-…NB6N11SMNG
The NB6N11SMNG is a differential 1:2 clock or data receiver that accepts AnyLevelTM input signals: LVPECL, CML, LVCMOS, LVTTL, or LVDS, which will be converted to LVDS and distribute two copies of the same clock or data, operating at up to 2.0 GHz or …AFGH4L25T120RWD
The AFGH4L25T120RWD is an AEC Q101 certified insulated gate bipolar transistor (IGBT) with a robust and cost-effective field stop VII trench structure. Youdaoplaceholder0 IGBTs offer superior performance in demanding switching applications with low on…AFGH4L25T120RW
The AFGH4L25T120RW is a single N-channel 1200V 25A insulated gate bipolar transistor (IGBT) with a robust and cost-effective field terminated type VII groove configuration. Youdaoplaceholder0 delivers outstanding performance in demanding switching app…FGAF40N60SMD
The FGAF40N60SMD is a 600 V insulated gate bipolar transistor (IGBT), mainly used in power electronic devices. This IGBT has the following main specifications:Configuration: SingleThe maximum collector-emitter voltage VCEO: 600 VCollector-emitter satu…FGY4L75T120SWD
The FGY4L75T120SWD is a 7th-generation diode that adopts the novel field-terminated 7th-generation IGBT technology and is packaged in the TO-247 4−lead. This IGBT features the best performance, with low switching and conduction losses, and can achiev…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: