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Service Telephone:86-755-83294757
Trade Name:BSC004NE2LS5ATMA1
Data Manual:BSC004NE2LS5ATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:8-PowerTDFN
Delivery Date:New and Original
Stock: 5000pcs
BSC004NE2LS5ATMA1 is an OptiMOS™ 5 low-voltage power MOSFET 25V transistor in a SuperSO8 package that provides a BiC RDS(on) of 0.45mOhm.
Product Attributes Of BSC004NE2LS5ATMA1
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TDSON-8-FL
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 479 A
Rds On - Drain-Source Resistance: 540 uOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Qg - Gate Charge: 238 nC
Features Of BSC004NE2LS5ATMA1
Excellent on-state resistance
Benchmark switching performance (minimum quality factor RDS(on) x Qg and RDS(on) x Qgd)
Specific components optimized for toroidal circuits to provide low RDS(on)
Parts with integrated Schottky diodes and models with reduced leakage current
Transistors BSC004NE2LS5ATMA1 N-Channel Power MOSFETs Transistors 8-PowerTDFN
Model
Brand
Package
Quantity
Describe
INFINEON
TO-220-3
3000
600V CoolMOS™ P7 Superjunction (SJ) MOSFET -- N-Channel Power MOSFET Transistor
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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