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GS-065-018-6-LR-MR (GaN Transistors): 700V Enhancement mode CoolGaN™ Transistor for ultimate efficiency and reliability

Overviews:

GS-065-018-6-LR-MR is a 700V enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-018-6-LR is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

GS-065-018-6-LR-MR Key Features:

700 V enhancement mode power transistor

850 V transient drain-to-source voltage

Bottom-cooled, 8x8 mm PDFN package

RDS(on) = 62 mΩ

IDSmax,DC = 23 A / IDsmax,Pulse = 39 A

Simple gate drive requirements (0 V to 6 V)

Transient tolerant gate drive (-20 V / +10 V)

High switching frequency (> 1 MHz)

Fast and controllable fall and rise times

Reverse conduction capability

Zero reverse recovery loss

Source Sense (SS) pin for optimized gate drive

RoHS 3 (6+4) compliant

Applications:

Consumer and Industrial Power Supplies

Power Adapters

LED Lighting Drivers

Fast Battery Charging

Power Factor Correction

Appliance and Industrial Motor Drives

Wireless Power Transfer

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