sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:CoolGaN™ Transistor
Brand:INFINEON
Particular Year:24+
Package:PG‑HSOF‑8
Delivery Date:New and Original
Stock: 3000pcs
IGT65R045D2 - 650V CoolGaN™ Enhancement‑Mode Power Transistor
Description
IGT65R045D2 is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 650 V. With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e‑mode concept to maturity with end‑to‑end production in high volumes.
Summary of Features
650V e-mode power transistor
Enhancement mode transistor ‑ Normally OFF switch
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
Bottom-side cooled package
ESD (HBM/CDM) JEDEC standards
Benefits
Improves system efficiency
Improves power density
Enables highest operating frequency
System cost reduction savings
Reduces EMI
Applications
AC-DC power conversion for telecom infrastructure
Datacenter and computing solutions
EV charging
Industrial power supplies
Photovoltaic
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-16
1000
650V CoolGaN™ power transistor, housed in a top-side cooled TOLT package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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