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IQDH29NE2LM5SC: 25V, OptiMOS™ Power MOSFET - N-Channel Power MOSFET Transistor, PG-WHSON-8

Overview:

The IQDH29NE2LM5SC - OptiMOS™ Power MOSFET 25V features industry-leading RDS(on) in a PQFN 5x6 lower source centre gate DSC package. The device features the industry's lowest 0.29 mOhm RDS(on) and excellent thermal performance for easy power loss management. The centre gate footprint is optimised for parallelisation. In addition, the double-sided cooled package dissipates five times more power compared to an overmolded package. This provides higher system efficiency and power density for a variety of end applications.

IQDH29NE2LM5SC - Product Specifications:

Series: OptiMOS™ 5

FET Type: N-Channel

Technology: MOSFET (Metal Oxide)

Drain-Source Voltage (Vdss): 25 V

Current at 25°C - Continuous Drain (Id): 75A (Ta), 789A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

On-resistance (max) at different Id, Vgs: 0.29 mOhm @ 50A, 10V

Vgs(th) at different Id (max): 2V @ 1.448mA

Gate Charge (Qg) (max) at varying Vgs: 110 nC @ 4.5 V

Vgs (max): ±16V

Input capacitance (Ciss) at varying Vds (max): 17000 pF @ 12 V

Power Dissipation (Max): 2.5W (Ta), 278W (Tc)

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: PG-WHSON-8-U02

Package/Housing: 8-PowerWDFN

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