sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN Transistors
Brand:INFINEON
Particular Year:24+
Package:PDFN 8x8
Delivery Date:New and Original
Stock: 1250pcs
GS-065-030-6-LT-MR 700V CoolGaN™ power transistors are enhancement mode GaN-on-Si power transistors with high current, high voltage breakdown, and high switching frequency Features.The GS-065 power transistors are available in a bottom cooled PDFN package. These power transistors have very low case thermal resistance, making them ideal for demanding high power applications.
Features
700 V Enhanced Power Transistor
850 V drain-to-source transient voltage
Bottom-cooled, 8 x 8 mm PDFN package
RDS(on) = 37 mΩ
IDS,max = 40 A / IDSmax,Pulse = 67 A
Simple gate drive requirements (0 V to 6 V)
Transient tolerance gate drive (-20 V / +10 V)
High switching frequency (> 1 MHz)
Fast, controlled fall and rise times
Reverse conduction capability
Zero reverse recovery loss
Supports high operating frequencies
Highest system efficiency achievable
Enables ultra-high power density designs
Supports BOM cost savings
Applications
Power adapters
LED lighting drivers
Fast battery charging
Power factor correction
Industrial power supplies
Photovoltaics
AC-DC Power Conversion for Telecom Infrastructure
Data Centre and Computing Solutions
Electrical and Industrial Motor Drives
Wireless Power Transfer
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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