sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN Chips
Brand:NOVOSENSE
Particular Year:24+
Package:QFN
Delivery Date:New and original
Stock: 3000pcs
The NSG65N15K-DQAFR is a system-level Power Stage product launched by NOVOSENSE, which integrates the half-bridge driver NSD2621 and two GaN switch tubes with voltage resistance of 650V and resistance of 150mΩ, and the working current can reach 20A. The NSG65N15K also integrates a bootstrap diode, and built-in adjustable dead zone time, undervoltage protection, overtemperature protection functions, which is conducive to the safe and reliable operation of GaN applications, and gives full play to its high frequency and high speed characteristics.
Features:
- Integrated 650V GaN switch tube and half-bridge driver
- GaN resistance 150mΩ
- No reverse recovery loss
- Built-in LDO makes the drive voltage more stable and reliable
- High and low edge independent UVLO protection function
- Internal adjustable dead zone time
- Built-in bootstrap diode
- Operating temperature :-40°C ~ 125°C
- Package form: QFN (9*9mm)
Applications:
• Half-bridge or full-bridge topologies such as totem pole PFC, ACF, and LLC
• Adapter high-density power supply
• Photovoltaic, motor drive and new energy fields
Model
Brand
Package
Quantity
Describe
TI
VQFN-52
3000
650V 30mΩ GaN FET with integrated driver, protection and zero voltage detection
TI
VQFN-54
3000
600V 30mΩ GaN FETs with integrated driver, protection and zero voltage detection
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Suzhou Novosense Microelectronics Co., Ltd. is a high performance and high reliability analog and mixed signal chip company. Since its establishment in 2013, the company has focused on three major directions: sensor, signal chain and power management,…
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