sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Single Tube
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and Original
Stock: 1000pcs
The AIMDQ75R140M1H CoolSiC™ MOSFET 750 V is a highly rugged SiC MOSFET with optimal system performance and reliability.
The CoolSiC™ Automotive 750V G1 SiC Trench MOSFET helps electric vehicle manufacturers build 11kW and 22kW bi-directional on-board chargers with higher efficiency, power density and reliability. The devices operate reliably at high temperatures (Tjmax +175°C) and use Infineon's proprietary technology. XT chip connection technology for best-in-class chip size thermal resistance.
The CoolSiC 750V G1 technology is extremely robust, especially under cosmic radiation, and is therefore ideally suited for bus voltages in excess of 500V. With excellent spurious conduction immunity, these devices can be safely driven at zero volts VGS off-grid (unipolar gate driver), reducing system complexity, PCB area footprint and BOM count. Wide gate-source voltage ratings (-5V to 23V, VGS quiescent) ensure compatibility with bipolar drivers, increasing design flexibility.
Features
Highly robust 750 V technology
Best-in-class RDS(on) x Qfr
Outstanding Ron x Qoss and Ron x QG
Low Crss/Ciss and high Vgsth performance at the same time
100% avalanche tested
XT interconnect technology for best-in-class thermal performance
State-of-the-art top-cooled package
Advantages
Excellent hard-switching efficiency
Enables higher switching frequencies
Higher reliability
Withstands bus voltages in excess of 500 V
Robust to parasitic turns
Unipolar drive
Best-in-class thermal dissipation
Applications
Solid state relays (SSRs)
Electric vehicle on-board battery chargers
High Voltage DC-DC Converters for Electric Vehicles
High Voltage Electronic Compressors
High Voltage PTC Heater Modules
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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