sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Single Tube
Brand:INFINEON
Particular Year:24+
Package:PG-HDSOP-22
Delivery Date:New and Original
Stock: 1000pcs
Infineon's IMDQ75R016M1H CoolSiC™ MOSFET 750 V is a highly rugged SiC MOSFET with optimal system performance and reliability.
The CoolSiC™ MOSFET 750 V leverages Infineon's more than 20 years of SiC experience. It offers advantages in terms of performance, reliability and ruggedness, as well as gate drive flexibility, which simplifies system design, improves cost-effectiveness and achieves the highest efficiency and power density. The innovative top-side cooled package further enhances the benefits of the CoolSiC™ 750 V, providing higher density, optimised power loop design and lower system and assembly costs.
IMDQ75R016M1H Feature Description
Highly robust 750 V technology
Best-in-class RDS(on) x Qfr
Outstanding Ron x Qoss and Ron x QG
Low Crss/Ciss and high Vgsth performance at the same time
100% avalanche tested
XT interconnect technology for best-in-class thermal performance
State-of-the-art top-cooled package
IMDQ75R016M1H Product Specifications
Series: CoolSiC™
Package: Tape and Reel (TR) Cut Tape (CT)
Part Status: For Sale
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-Source Voltage (Vdss): 750 V
Current at 25°C - Continuous Drain (Id): 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
On Resistance (Max) at Different Id, Vgs: 15 mOhm @ 41.5A, 20A
Vgs(th) at different Id (max): 5.6V @ 14.9mA
Gate Charge (Qg) (max) at varying Vgs: 80 nC @ 18 V
Vgs (max): +23V, -5V
Input capacitance (Ciss) at different Vds (max): 2869 pF @ 500 V
Power Dissipation (Max): 384W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package/Housing: 22-PowerBSOP Module
IMDQ75R016M1H Potential Applications
Solid State Relays (SSRs)
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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