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UF3SC065030B7S 650 V, 27 mohm High performance SiC FETs are based on a unique "common source, common gate" circuit configuration that includes a normally open SiC JFET that can be co-packaged with Si MOSFETs to produce a normally closed SiC FETs. The device is packaged in a D2PAK-7L package with ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application that requires a standard gate drive.

Specifications of UF3SC065030B7S:

Channel mode: Enhancement

Configuration: Single

Descent time: 11 ns, 9 ns

Id- Continuous drain current: 62 A

Maximum operating temperature: + 175°C

Minimum operating temperature: -55 °C

Humidity sensitivity: Yes

Installation style: SMD/SMT

Number of channels: 1 Channel

Package/Box: D2PAK-7

Package: Reel

Encapsulation: Cut Tape

Pd- Power dissipation: 214 W

Product: SiC FETs

Product type: SiC MOSFETS

Qg- Grid charge: 43 nC

Rds On- drain-source on-resistance: 27 mOhms

Rise time: 26 ns, 28 ns

Series: UF3SC

Factory packing quantity: 800

Subcategory: Transistors

Technology: SiC

Brand name: SiC FET

Transistor polarity: N-Channel

Type: SiC FET

Typical shutdown delay: 46 ns

Typical connection delay: 23 ns

Vds- drain-source breakdown voltage: 650 V

Vgs - grid - source voltage: -25 V, + 25 V

Vgs TH-gate source threshold voltage: 6 V

Unit weight: 4.675g

• 1.Is the inventory and price seen on the platform accurate?

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  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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• 6.Can the company issue an invoice?

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