sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
The NVHL060N065SC1 EliteSiC MOSFET is a 650V, 60mΩ (typical value), 47A single N-channel MOSFET with a compact, efficient design for high thermal performance. The MOSFET uses a new technology that offers superior switching performance and higher reliability than silicon devices. In addition, low on-resistance and compact chip size ensure low capacitance and low gate charge. Typical applications include automotive on-board chargers and electric vehicle (EV) DC/DC converters.
Specifications of NVHL060N065SC1:
Channel mode: Enhancement
Configuration: Single
Descent time: 8 ns
Forward transconductance - Minimum: 2 S
Id- Continuous drain current: 47 A
Maximum operating temperature: + 175°C
Minimum operating temperature: -55 °C
Installation style: Through Hole
Number of channels: 1 Channel
Package/housing: TO-247-3
Package: Tube
Pd- Power dissipation: 176 W
Product type: SiC MOSFETS
Qg- Grid charge: 74 nC
Rds On- drain-source on-resistance: 44 mOhms
Rise time: 32 ns
Series: NVHL060N065SC1
Factory packing quantity: 450
Subcategory: Transistors
Technology: SiC
Brand name: EliteSiC
Transistor polarity: N-Channel
Typical shutdown delay: 23 ns
Typical connection delay: 12 ns
Vds- drain-source breakdown voltage: 650 V
Vgs - grid - source voltage: -8 V, + 22 V
Vgs TH-gate source threshold voltage: 4.3V
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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