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The NTBG023N065M3S is a 650 V silicon carbide MOSFET in a surface-mount D2PAK-7L package.

Instructions:

The new family of 650V M3S flat SiC MOSFETs is optimized for fast switching applications. The planar technique works reliably with a negative grid voltage drive and closes spikes on the grid. The series performs best with an 18V gate drive, but also works well with a 15V gate drive.

Specifications of NTBG023N065M3S:

Channel mode: Enhancement

Configuration: Single

Drop time: 9.6ns

Id- Continuous drain current: 40 A

Maximum operating temperature: + 175°C

Minimum operating temperature: -55 °C

Installation style: SMD/SMT

Number of channels: 1 Channel

Package/Box: D2PAK-7

Package: Reel

Pd-power dissipation: 263 W

Product: SiC MOSFETS

Product type: SiC MOSFETS

Qg- Grid charge: 69 nC

Rds On- drain-source on-resistance: 33 mOhms

Rise time: 15 ns

Series: NTBG023N065M3S

Factory packing quantity: 800

Subcategory: Transistors

Technology: SiC

Transistor polarity: N-Channel

Transistor type: 1 N-Channel

Typical shutdown delay: 35 ns

Typical turn-on delay: 11 ns

Vds- drain-source breakdown voltage: 650 V

Vgs - grid - source voltage: -8 V, + 22 V

Vgs TH-gate source threshold voltage: 4 V

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