sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFETs
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The IMW65R040M2H CoolSiC™ MOSFET 650 V, 40 mΩ G2 in TO-247-3 builds on the advantages of Generation 1 technology to accelerate system design for cost-optimised, efficient, compact and reliable solutions. Generation 2 products offer significant improvements in key performance metrics for both hard-switching operation and soft-switching topologies for all common AC-DC, DC-DC and DC-AC class combinations.
Feature Description (IMW65R040M2H)
Superior performance metrics (FOM)
Best-in-class RDS(on)
High ruggedness and overall quality
Flexible drive voltage range
Supports unipolar drive (VGSoff=0)
Best-in-class anti-conductance effect
Improved package interconnect via .XT
Product Attributes(IMW65R040M2H)
Manufacturer: Infineon
Product Category: Silicon Carbide MOSFETs
Channel Mode: Enhancement
Configuration: Single
Dropout Time: 5 ns
Id-continuous drain current: 46 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-247-3
Pd-Power Dissipation: 172 W
Product type: SiC MOSFETS
Qg-Gate charge: 28 nC
Rds On-drain on-resistance: 49 mOhms
Rise time: 10 ns
Series: 650V G2
Technology: SiC
Trade name: CoolSiC
Transistor polarity: N-Channel
Typical Off Delay Time: 15 ns
Typical turn-on delay time: 23 ns
Vds - drain-source breakdown voltage: 650 V
Vgs - gate-source voltage: - 7 V, + 23 V
Vgs th - gate-source threshold voltage: 5.6 V
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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