sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Transistor
Brand:Microchip
Particular Year:24+
Package:Die
Delivery Date:New and Original
Stock: 2000pcs
MSC027SMA330D/S is 3300V 25mΩ Silicon Carbide (SiC) MOSFET Transistor.
Specifications Of MSC027SMA330D/S
Drain Source Voltage:3300V
Continuous Drain Current:104A
On-State Resistance:25mΩ
Junction Temperature: -55°C - 150°C
Feature Of MSC027SMA330D/S
Low capacitances and low gate charge
Fast switching speed due to low internal gage resistance (ESR)
Stable operation at high junction temperature at 150 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS Compliant
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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