sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:PSRAM Memory
Brand:INFINEON
Particular Year:24+
Package:24-FBGA
Delivery Date:New and Original
Stock: 2000pcs
S70KS1282GABHA020 is high-speed CMOS, self-refresh DRAMs with HYPERBUS™ interfaces. The DRAM array uses dynamic cells that require a periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS interface master (host). Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. The memory is more accurately described as Pseudo-Static RAM (PSRAM).
Feature
HYPERBUS Interface
1.8V / 3.0V interface support
Single-ended clock - 11 bus signals
Optional differential clock - 12 bus signals
Bidirectional Read-Write Data Strobe (RWDS)
Output at the start of all transactions to indicate refresh latency
Output during reading transactions as Read Data Strobe
Input during write transactions as Write Data Mask
Optional DDR Center-Aligned Read Strobe (DCARS)
200MHz maximum clock rate
DDR - transfers data on both edges of the clock
Data throughput up to 400MBps (3,200Mbps)
Model
Brand
Package
Quantity
Describe
Winbond
WLCSP-49
2000
PSRAM (Pseudo-SRAM) Memory IC 256Mb HyperBus 200 MHz 35 ns 49-WFBGA (4x4)
INFINEON
49-FBGA
3000
PSRAM (Pseudo-SRAM) Memory IC 256Mb HyperBus 200 MHz 35 ns 49-FBGA (8x8)
INFINEON
24-FBGA
3000
PSRAM (Pseudo-SRAM) memory IC 64Mbit SPI-8 I/O 200 MHz 35 ns 24-FBGA (6x8)
INFINEON
24-FBGA
3000
PSRAM (Pseudo-SRAM) memory IC 64Mbit SPI-8 I/O 200 MHz 35 ns 24-FBGA (6x8)
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
SAK-TC1791F-512F240EP AB
The TC1791 is a high performance microcontroller with a TriCore CPU, program and data memory, bus, bus arbitration, interrupt controller, peripheral control processor and DMA controller and several on-chip peripherals.The TC1791 is designed to meet th…IKW50N65WR5
IKW50N65WR5 High Speed 650 V, 50 A Reverse Conductivity TRENCHSTOP™ 5 WR5 IGBT in TO-247 Package.IGLD65R080D2
The IGLD65R080D2 GaN power transistor can improve the efficiency of high frequency operation. As part of the CoolGaN™ 650 V G5 series, it meets the highest quality standards for highly reliable design and superior efficiency.The IGLD65R080D2 transist…IGC033S10S1
The IGC033S10S1 is a 100 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high current app…IGC033S101
The IGC033S101 is a 100 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high current appl…IGC025S08S1
The IGC025S08S1 is an 80 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its extremely low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high c…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: