sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:PSRAM Memory
Brand:INFINEON
Particular Year:24+
Package:24-FBGA
Delivery Date:New and Original
Stock: 2000pcs
S70KL1282DPBHV023 is high-speed CMOS, self-refresh DRAMs with HYPERBUS™ interfaces. The DRAM array uses dynamic cells that require a periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS interface master (host). Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. The memory is more accurately described as Pseudo-Static RAM (PSRAM).
Feature
HYPERBUS Interface
1.8V / 3.0V interface support
Single-ended clock - 11 bus signals
Optional differential clock - 12 bus signals
Bidirectional Read-Write Data Strobe (RWDS)
Output at the start of all transactions to indicate refresh latency
Output during reading transactions as Read Data Strobe
Input during write transactions as Write Data Mask
Optional DDR Center-Aligned Read Strobe (DCARS)
200MHz maximum clock rate
DDR - transfers data on both edges of the clock
Data throughput up to 400MBps (3,200Mbps)
Applications
Smart buildings
Model
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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