sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) Diodes
Brand:Qorvo
Particular Year:24+
Package:TO-220-2
Delivery Date:New and original
Stock: 3000pcs
The UJ3D06504TS is A 4 A, 650 V SiC combined PiN Schottky (MPS) diode in a TO-220 2L package. The diode has zero reverse recovery charge and a maximum junction temperature of 175°C, making it ideal for high-frequency, high-efficiency power systems with minimal cooling requirements.
Specifications
Products: Schottky Silicon carbide diode
Installation style: through hole
Package/housing: TO-220-2
Configuration: Single
Technology: SiC
If - Forward current: 4 A
Vrrm - Repeat reverse voltage: 650 V
Vf - Forward voltage: 1.5V
Ifsm - Forward surge current: 29 A
Ir-reverse current: 700 nA
Minimum operating temperature: -55 °C
Maximum operating temperature: + 175°C
Series: UJ3D
Qualification: AEC-Q101
Pd- Power dissipation: 71.4 W
Vr - Reverse voltage: 650 V
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-220-2
3000
700V, 10A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-220-2
Microchip
TO-247-2
3000
700V 30A Silicon Carbide (SiC) Schottky Barrier Diodes, TO-247-2
Microchip
TO-220-2
3000
700V 30A Silicon Carbide (SiC) Schottky Barrier Diodes, TO-220-2
Microchip
D3PAK
3000
700V 60A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), D3PAK
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Headquartered in North Carolina, Qorvo brings together more than 30 years of design experience and employs nearly 8,000 people worldwide. Qorvo has two production bases in China, located in Beijing and Dezhou, Shandong Province. Qorvo(Beijing) was est…
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