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ON Semiconductor's FFSH2065BDN automotive silicon carbide (SiC) Schottky diodes are AEC-Q101-compliant devices designed to take advantage of the advantages of silicon carbide over silicon (Si).The FFSH2065BDN SiC Schottky diodes offer higher forward surge capability, lower reverse leakage current, and no reverse recovery current. In addition, these silicon carbide Schottky diodes offer temperature-independent switching characteristics and excellent thermal performance. This results in higher system efficiency, faster operating frequency, higher power density, lower EMI, smaller system size and lower cost.

Product Attributes

Product Category: Schottky Diodes and Rectifiers

Product: Silicon Carbide Schottky Diodes

Mounting Style: Through Hole

Package / Case: TO-247-3

Configuration: Dual Anode Common Cathode

Technology: SiC

If - Forward Current: 20 A

Vrrm - Repetitive reverse voltage: 650 V

Vf - Forward voltage: 1.38 V

Ifsm - Forward inrush current: 42 A

Ir - Reverse current: 40 uA

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Trade Name: EliteSiC

Qualification: AEC-Q101

Pd - Power Dissipation: 65 W

Vr - Reverse Voltage : 650 V

Unit weight: 5.457 g

Applications

- General Purpose

- SMPS, solar inverters, UPS

- Power switching circuits

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  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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