sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) Diodes
Brand:ON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 30000pcs
ON Semiconductor's FFSH2065BDN automotive silicon carbide (SiC) Schottky diodes are AEC-Q101-compliant devices designed to take advantage of the advantages of silicon carbide over silicon (Si).The FFSH2065BDN SiC Schottky diodes offer higher forward surge capability, lower reverse leakage current, and no reverse recovery current. In addition, these silicon carbide Schottky diodes offer temperature-independent switching characteristics and excellent thermal performance. This results in higher system efficiency, faster operating frequency, higher power density, lower EMI, smaller system size and lower cost.
Product Attributes
Product Category: Schottky Diodes and Rectifiers
Product: Silicon Carbide Schottky Diodes
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Dual Anode Common Cathode
Technology: SiC
If - Forward Current: 20 A
Vrrm - Repetitive reverse voltage: 650 V
Vf - Forward voltage: 1.38 V
Ifsm - Forward inrush current: 42 A
Ir - Reverse current: 40 uA
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Trade Name: EliteSiC
Qualification: AEC-Q101
Pd - Power Dissipation: 65 W
Vr - Reverse Voltage : 650 V
Unit weight: 5.457 g
Applications
- General Purpose
- SMPS, solar inverters, UPS
- Power switching circuits
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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FFSH1065B-F155 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristic…Contact Number:86-755-83294757
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