sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:F3L11MR12W2M1B74BOMA1
Data Manual:F3L11MR12W2M1B74BOMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:MODULE
Delivery Date:New and Original
Stock: 2000pcs
F3L11MR12W2M1B74BOMA1 EasyPACK™ 2B 1200 V, 11.3 mΩ Class 3 module in active NPC (ANPC) topology with CoolSiC™ MOSFET, TRENCHSTOP™ IGBT7, NTC temperature sensor and PressFIT contact technology.
Product attributes
Series: EasyPACK™
IGBT Type: Trench type field cut-off
Configuration: Three-stage inverter
Voltage - Collector Breakdown (max): 1200 V
Current - Collector (Ic) (max): 100 A
Power - max. value: 20 mW
Vce(on) (max) for different Vge, Ic: 1.5V @ 15V, 100A
Current - Collector cut-off (max): 9 µA
Input capacitance (Cies) at different Vce: 21.7 nF @ 25 V
Input: Quasi
NTC thermistor: Yes
Operating temperature: -40°C ~ 175°C (TJ)
Mounting type: Chassis mounted
Package/Housing: Module
Supplier Device Package: AG-EASY2B-2
Benefits
Excellent gate oxide reliability
Short and clean commutation loops
Supports the entire cos φ range - perfect for energy storage systems
Easy to design
High degree of freedom in inverter design
150 kW for two modules in parallel in solar applications
75 kW per module in an energy storage system
Application areas
Energy storage systems
Solar system solutions
Model
Brand
Package
Quantity
Describe
INFINEON
Module
3000
Silicon Carbide MOSFET Modules - 3.3kV, CoolSiC™ MOSFET Half Bridge Module
INFINEON
Module
3000
Silicon Carbide MOSFET Modules - 3.3kV, CoolSiC™ MOSFET Half Bridge Module
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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