sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTH4L022N120M3S
Data Manual:NTH4L022N120M3S.PDF
Brand:ON
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 2000pcs
NTH4L022N120M3S Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
Features
• Type. RDS (on)=22 m@VGS =18 V
• Ultra low gate charge (QG (tot)=151 nC)
• Low capacitance high-speed switch (Coss=146 pF)
• 100% avalanche testing
• This device does not contain halides and complies with RoHS standards, exempt from 7a, Pb − Free 2LI (secondary interconnection)
Typical Applications
• Solar inverters
• Electric vehicle charging station
• UPS (Uninterruptible Power Supply)
• Energy storage system
• SMPS (Switching Mode Power Supply)
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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