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NTH4L080N120SC1 - 40mohm, 1200V Silicon Carbide (SiC) MOSFET Transistors in TO-247-4L package

Part Number: NTH4L080N120SC1

Package: TO-247-4

Type: MOSFET Transistors

Description: N-Channel 1200V 29A (Tc) 170W (Tc) Through Hole TO-247-4L

Product Overview

NTH4L080N120SC1 - Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Product Features

1200 V @ TJ= 175°C

Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

High Speed Switching with Low Capacitance

100% Avalanche Tested

Applications

• Industrial Motor Drive

• UPS

• Boost Inverter

• PV Charger

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