sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKW75N65ET7XKSA1
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-3
Delivery Date:New and Orignal
Stock: 1000pcs
The IKW75N65ET7XKSA1 features Trenchstop™ and Fieldstop™ technology for reliable humidity design. This low loss has a very soft fast recovery reverse parallel diode, short trailing current and very low VCEsat. it is ideally suited for use in drivers, industrial power supplies and energy generation applications.
Product Attributes
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 80 A
Current - Collector pulse (Icm): 225 A
Vce(on) at varying Vge, Ic (max): 1.65V @ 15V, 75A
Power - Max: 333 W
Switching Energy: 2.17 mJ (on), 1.23 mJ (off)
Input Type: Standard
Gate Charge: 435 nC
Td (on/off) value at 25°C: 28ns/310ns
Test Conditions: 400V, 75A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 100 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: PG-TO247-3
Applications
● Drives
● Servers
● GPD
● Industrial Power Supplies
● Industrial UPS
● Residential UPS
● Energy Generation
● Solar central inverters
● Solar array inverters
● Solar pumps
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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