sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NDSH40120C-F155
Brand:ON
Particular Year:24+
Package:TO-247-2
Delivery Date:New and original
Stock: 2000pcs
The NDSH40120C-F155 1200V Silicon Carbide (SiC) Schottky diode is available in a TO-247-2L package, providing superior switching performance and increased reliability. The device's lack of reverse recovery current, temperature-independent switching characteristics and excellent thermal performance make silicon carbide the next generation of power semiconductors. System benefits include highest efficiency, faster operating frequency, higher power density, lower EMI, and lower system size and cost.
Product attribute
Technology: SiC (silicon carbide) Schottky
Voltage - DC reverse (Vr) (Max) : 1200 V
Current - Average rectification (Io) : 46A
Voltage under different If - forward (Vf) : 1.75 V @ 40 A
Speed: None Recovery time > 500mA (Io)
Reverse recovery time (trr) : 0 ns
Current - reverse leakage at different Vr: 200µA @ 1.2kV
Capacitance in different Vr and F: 2840pF@1V, 100kHz
Grade: -
Qualification: -
Installation type: Through hole
Package/housing: TO-247-2
Supplier device package: TO-247-2
Operating temperature - junction: -55°C ~ 175°C
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
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