sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NDSH20120CDN
Brand:ON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
The NDSH20120CDN Silicon Carbide (SiC) Schottky diode is packaged in a TO-247-3LD package with no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. The device achieves the following system benefits: increased system efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and reduced cost. The EliteSiC diode has a positive temperature coefficient and is easy to parallel.
Product attribute
Diode configuration: 1 pair of common cathode
Technology: SiC (silicon carbide) Schottky
Voltage - DC reverse (Vr) (Max) : 1200 V
Current - Average rectifier (Io) (per diode) : 10A
Voltage under different If - forward (Vf) : 1.75 V @ 10 A
Speed: None Recovery time > 500mA (Io)
Reverse recovery time (trr) : 0 ns
Current - reverse leakage at different Vr: 200µA @ 1.2kV
Operating temperature - junction: -55°C ~ 175°C
Grade: -
Qualification: -
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: TO-247-3
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-220-2
3000
700V, 10A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-220-2
Microchip
TO-247-2
3000
700V 30A Silicon Carbide (SiC) Schottky Barrier Diodes, TO-247-2
Microchip
TO-220-2
3000
700V 30A Silicon Carbide (SiC) Schottky Barrier Diodes, TO-220-2
Microchip
D3PAK
3000
700V 60A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), D3PAK
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