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NDSH20120C-F155 Silicon Carbide (SiC) Schottky diode offers excellent switching performance and increased reliability compared to silicon devices. The diode has no reverse recovery current, temperature-independent switching characteristics and excellent thermal performance. The EliteSiC diode has a positive temperature coefficient and is easy to parallel.

Product attribute

Technology: SiC (silicon carbide) Schottky

Voltage - DC reverse (Vr) (Max) : 1200 V

Current - Average rectification (Io) : 26A

Voltage under different If - forward (Vf) : 1.75 V @ 20 A

Speed: None Recovery time > 500mA (Io)

Reverse recovery time (trr) : 0 ns

Current - reverse leakage at different Vr: 200µA @ 1.2kV

Capacitance at different Vr and F: 1480pF@1V, 100kHz

Grade: -

Qualification: -

Installation type: Through hole

Package/housing: TO-247-2

Supplier device package: TO-247-2

Operating temperature - junction: -55°C ~ 175°C

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