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STPSC10H065DLF This 10 A, 650 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured on a silicon carbide substrate. The use of a wide bandgap material allows the design of a Schottky diode structure with a rated voltage of 650 V. This diode has a high performance power of 10 A and 650 V. Due to the Schottky structure, there is no recovery at turn-off and the ringing mode is negligible. The minimum capacitive shutdown behaviour is temperature independent. The use of the PowerFLAT 8x8 HV low-profile package enables low forward voltage drops associated with high surge capability in low-space environments such as telecom and networking, industrial or renewable energy.

Product Characteristics

Technology: SiC (Silicon Carbide) Schottky technology

Voltage - Constant Reverse (Vr) (max): 650 В

Current - average rectification (Io): 10 А

Voltage - forward (Vf) at changes: 1.55 V at 10 A

Speed: no recovery time > 500 mA (Io)

Reverse recovery time (trr): 0 ns.

Current at different Vr values - reverse leakage: 100 µA at 650 V

Capacitance at different values of Vr, F: 595 pF at 0 V, 1 MHz

Mounting type: surface mount

Package/case: 8-PowerVDFN

Supplier device package: PowerFlat™ (8x8) HV

Operating Temperature - Junction: -40°C ~ 175°C

Applications

● Boost PFC

● Bootstrap diodes

● LLC clamping function

● High frequency inverter applications

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