sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STPSC12065GY
Brand:ST
Particular Year:23+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
The STPSC12065GY 650V Schottky silicon carbide diode is an ultra-high performance power Schottky diode. The device's wide bandgap material allows the design of Schottky diode structures with 650V ratings. Thanks to the Schottky structure, there is no indication of recovery on shutdown and the ringing pattern is negligible. Even the slightest capacitive shutdown characteristics are not affected by temperature. These devices are particularly suitable for PFC applications where they improve performance under hard switching conditions. The high forward surge capability ensures good robustness during transient phases.
Product Properties
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (max): 650 V
Current - Average Rectification (Io): 12A
Voltage - Forward (Vf) at Different If: 1.45 V @ 12 A
Speed: No Recovery Time > 500 mA (Io)
Reverse Recovery Time (trr): 0 ns
Current at different Vr - reverse leakage: 50 µA @ 600 V
Capacitance at different Vr, F: 750 pF @ 0 V, 1 MHz
Grade: Automotive grade
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Applications
● Car chargers
Model
Brand
Package
Quantity
Describe
ST
TO-263-3
1000
150 V, 2 x 20 A high-voltage Schottky rectifiers for automotive applications
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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