sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STPSC10H065GY
Brand:ST
Particular Year:23+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
The STPSC10H065GY 650V Schottky silicon carbide diode is an ultra-high performance power Schottky diode. The device's wide bandgap material allows the design of Schottky diode structures with 650V ratings. Thanks to the Schottky structure, there is no indication of recovery on shutdown and the ringing pattern is negligible. Even the slightest capacitive shutdown characteristics are not affected by temperature. These devices are particularly suitable for PFC applications where they improve performance under hard switching conditions. The high forward surge capability ensures good robustness during transient phases.
Product Attributes
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectification (Io): 10A
Voltage - Forward (Vf) at Different If: 1.75 V @ 10 A
Speed: No Recovery Time > 500 mA (Io)
Reverse Recovery Time (trr): 0 ns
Current at different Vr - reverse leakage: 100 µA @ 650 V
Capacitance at different Vr, F: 480 pF @ 0 V, 1 MHz
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Model
Brand
Package
Quantity
Describe
ST
TO-263-3
1000
150 V, 2 x 20 A high-voltage Schottky rectifiers for automotive applications
ST
LCC-2B
1000
Schottky Diodes and Rectifiers Aerospace 45 V Power Schottky Rectifiers - Engineering Models
ST
TO-263-3
1000
Schottky Diodes and Rectifiers Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diodes
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
STL175N4LF8AG
The STL175N4LF8AG is a 40 V N-channel enhancement power MOSFET designed in STripFET F8 technology with an enhanced trench gate structure.STL170N4LF8
The STL170N4LF8 is a 40 V N-channel enhancement power MOSFET designed in STripFET F8 technology with an enhanced channel gate structure.ST25R100-CMET
The ST25R100-CMET multi-purpose NFC transceiver delivers high-end performance in a small 4x4 mm package, bringing the convenience and functionality of contactless interaction to a variety of end-use applications. It is optimised for end products in th…STL305N4LF8AG
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.STL165N10F8AG
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.STL300N4LF8
This N-channel power MOSFET features enhanced trench gate structure with STripFET F8 technology.Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: