sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMBG65R050M2H
Brand:INFINEON
Particular Year:23+
Package:TO263-7
Delivery Date:New original
Stock: 1000pcs
IMBG65R050M2H CoolSiC™ MOSFET 650 VSiC MOSFET is available in a compact 7-pin SMD package based on advanced Infineon silicon carbide groove technology for high-power applications. The device is designed to improve system performance, reduce size and enhance reliability.
Feature description
Low Qrr and Qoss
Low switching loss
Reversing robust fast body diode
Advanced trench technology provides excellent grid oxide reliability
Excellent thermal performance with.XT interconnect technology
Avalanche ability is stronger
SMD package for direct integration to PCB
Sensing pins used to optimize switch performance
Typical application
Server
telegraphy
Switching Power Supply (SMPS)
Solar energy system
Energy storage and battery systems
Uninterruptible Power Supply (UPS)
Electric vehicle charging
Motor driver
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V 7mΩ CoolSiC™ Trench Silicon Carbide MOSFET in TO247-4 Package
INFINEON
TO-247-3
2000
Through-hole N-channel 650 V 26A (Tc) 96W (Tc) PG-TO247-3-41
INFINEON
TO-247-3
1000
1200V 14mΩ CoolSiC™ trench-type silicon carbide MOSFETs in TO247-3 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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