sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPDQ60R022S7A
Data Manual:IPDQ60R022S7A.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-HDSOP-22-1
Delivery Date:New and Original
Stock: 8000pcs
Integrated circuit chip IPDQ60R022S7A N-channel 600V CoolMOSTM SJ S7A power device, high-voltage power MOSFET transistor
Model: IPDQ60R022S7A
Packaging: PG-HDSOP-22-1
Type: N-channel MOSFET transistor
Product specifications
FET type: N-channel
Technology: MOSFET (metal oxide)
Drain source voltage (Vdss): 600 V
Continuous drain (Id) at -25 ° C current: 24A (Tc)
Gate charge (Qg) (maximum) @ Vgs: 150nC@12V
Vgs (maximum): ± 20V
Input capacitance (Ciss) (maximum) @ Vds: 5640 pF@300 V
Power consumption (maximum): 416W (Tc)
Working temperature: -40 ° C~150 ° C (TJ)
Installation type: surface mount type
Package/Housing: PG-HDSOP-22-1, 22 PowerBSOP Module
IPDQ60R022S7A technology can achieve first-class RD with minimal footprint. Kelvin source pins improve switching performance at high currents.
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