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IMBF170R1K0M1 CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET with TO-263-7 for increased creepage distance, optimized for flyback topology, suitable for access to DC bus voltages from 600 V to 1000 V in many power applications Auxiliary power.

Specification

FET Type N-Channel

Technology SiCFET (Silicon Carbide)

Drain-source voltage (Vdss) 1700 V

Current at 25°C - Continuous Drain (Id) 5.2A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 12V, 15V

On-resistance (max) at different Id, Vgs 1000mΩ @ 1A, 15V

Vgs(th) (max) at different Id 5.7V @ 1.1mA

Gate charge (Qg) (max) at various Vgs 5 nC @ 12 V

Vgs (max) +20V, -10V

Input Capacitance (Ciss) at Vds (max) 275 pF @ 1000 V

FET function -

Power Dissipation (Max) 68W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PG-TO263-7-13

Package/Case TO-263-8, D²Pak (7-lead + tab), TO-263CA

Advantage

1700 V SiC MOSFET enables simple and efficient single-ended flyback topology for auxiliary power

The SMD (Surface Mount) package facilitates direct integration on the PCB and enables natural convection cooling without the need for an additional heat sink

Reduced isolation effort due to increased creepage and clearance for product packages

Reduce system complexity

High power density

Application Field

energy storage system

Electric vehicle fast charging

power supply

Industrial Motor Drive and Control

Solar System Solutions

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