sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FFSH4065BDN-F085
Data Manual:FFSH4065BDN-F085.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The FFSH4065BDN-F085 silicon carbide (SiC) Schottky diode uses new technology to provide superior switching performance and higher reliability than silicon. Silicon carbide's non-reverse recovery current, temperature-independent switching characteristics and excellent thermal performance make it the next generation of power semiconductors. System benefits include maximum energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Product attributes
Manufacturer: onsemi
Product Type: Schottky Diodes and Rectifiers
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Dual Anode Common Cathode
Technology: SiC
If - Forward current: 40 A
Vrrm - Repeated reverse voltage: 650 V
Vf - Forward voltage: 1.38 V
Ifsm - Forward inrush current: 84 A
Ir - Reverse current: 40 uA
Min. operating temperature: - 55 C
Maximum operating temperature: + 175 C
Qualification: AEC-Q101
Pd - Power dissipation: 127 W
Vr - Reverse voltage: 650 V
Applications
- Automotive HEV-EV on-board chargers
- Automotive HEV-EV DC-DC converters
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
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