sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:FFSH2065B-F085
Data Manual:FFSH2065B-F085.PDF
Brand:ON
Particular Year:23+
Package:TO-247-2
Delivery Date:New and Original
Stock: 1144pcs
The FFSH2065B-F085 silicon carbide (SiC) Schottky diode uses new technology to provide superior switching performance and higher reliability than silicon. Silicon carbide's non-reverse reovery current, temperature-independent switching characteristics and excellent thermal performance make it the next generation of power semiconductors. System benefits include maximum energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Product attributes
Manufacturer: onsemi
Product Type: Schottky Diodes and Rectifiers
Mounting Style: Through Hole
Package / Case: TO-247-2
Configuration: Single
Technology: SiC
If - Forward current: 20 A
Vrrm - Repeated reverse voltage: 650 V
Vf - Forward voltage: 1.38 V
Ifsm - Forward inrush current: 84 A
Ir - Reverse current: 40 uA
Min. operating temperature: - 55 C
Maximum operating temperature: + 175 C
Qualification: AEC-Q101
Pd-Power dissipation: 148 W
Vr - Reverse voltage : 650 V
Unit weight: 5.321 g
Applications
-Automotive HEV-EV on-board chargers
-Automotive HEV-EV DC-DC converters
Model
Brand
Package
Quantity
Describe
Microchip
TO-247-3
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-3
Microchip
TO-247-2
3000
700V, 50A Silicon Carbide (SiC) Schottky Barrier Diode (SBD), TO-247-2
Microchip
TO-247-2
3000
700V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
Microchip
TO-247-2
3000
700V, 24A Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs), TO-247-2
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
NCV33202VDR2G
NCV33202VDR2G op-amps provides rail-to-rail operation on both the input and output. The inputs can be driven as high as 200mV beyond the supply rails without phase reversal on the outputs, and the output can swing within 50 mV of each rail. This rail-…NB6N11SMNG
The NB6N11SMNG is a differential 1:2 clock or data receiver that accepts AnyLevelTM input signals: LVPECL, CML, LVCMOS, LVTTL, or LVDS, which will be converted to LVDS and distribute two copies of the same clock or data, operating at up to 2.0 GHz or …AFGH4L25T120RWD
The AFGH4L25T120RWD is an AEC Q101 certified insulated gate bipolar transistor (IGBT) with a robust and cost-effective field stop VII trench structure. Youdaoplaceholder0 IGBTs offer superior performance in demanding switching applications with low on…AFGH4L25T120RW
The AFGH4L25T120RW is a single N-channel 1200V 25A insulated gate bipolar transistor (IGBT) with a robust and cost-effective field terminated type VII groove configuration. Youdaoplaceholder0 delivers outstanding performance in demanding switching app…FGAF40N60SMD
The FGAF40N60SMD is a 600 V insulated gate bipolar transistor (IGBT), mainly used in power electronic devices. This IGBT has the following main specifications:Configuration: SingleThe maximum collector-emitter voltage VCEO: 600 VCollector-emitter satu…FGY4L75T120SWD
The FGY4L75T120SWD is a 7th-generation diode that adopts the novel field-terminated 7th-generation IGBT technology and is packaged in the TO-247 4−lead. This IGBT features the best performance, with low switching and conduction losses, and can achiev…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: