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The IMZA120R040M1H 1200V 40mΩ CoolSiCTM SiC MOSFET in TO247-4 package is based on an advanced trench process optimized for performance and reliability. Compared with traditional silicon (Si)-based devices such as IGBTs and MOSFETs, SiC MOSFETs have many advantages, such as the lowest gate charge and device capacitance in 1200 V switching devices, no reverse recovery losses in the body diode, and turn-off losses are affected by temperature. Turn-on characteristics with little influence and no knee voltage. Therefore, CoolSiC™ SiC MOSFETs are ideal for hard switching and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies, and DC-DC converters or DC-AC inverters.

Infineon's SiC MOSFETs in the TO247-4 package reduce the effect of source parasitic inductance on the gate circuit, enabling faster switching and higher efficiency.

Product Properties 

Manufacturer Infineon Technologies

Series CoolSiC™

Packaging Tube

FET Type N-Channel

Technology SiCFET (Silicon Carbide)

Drain-source voltage (Vdss) 1200 V

Current at 25°C - Continuous Drain (Id) 55A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 15V, 18V

On-resistance (max) at various Id, Vgs 54.4 milliohms @ 19.3A, 18V

Vgs(th) (max) at different Id 5.2V @ 8.3mA

Gate charge (Qg) (max) at various Vgs 39 nC @ 18 V

Vgs (max) +20V, -5V

Input Capacitance (Ciss) at Vds (Maximum) 1620 nF @ 25 V

FET function -

Power Dissipation (Max) 227W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Supplier Device Package PG-TO247-4-8

Package/Enclosure TO-247-4

Application Field

battery formation

Electric vehicle fast charging

Motor Control and Drive

power supply

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