sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMW120R007M1HXKSA1
Data Manual:IMW120R007M1HXKSA1.pdf
Brand:INFINEON
Particular Year:21+
Package:TO-247-3
Delivery Date:New and Original
Stock: 240pcs
The IMW120R007M1H 1200V 7mΩ CoolSiCTM SiC MOSFET in TO247-3 package is based on an advanced trench process optimized for performance and reliability. Compared with traditional silicon (Si)-based devices such as IGBTs and MOSFETs, SiC MOSFETs offer many advantages, such as the lowest gate charge and device capacitance in 1200 V switching devices, no reverse recovery losses in the body diode, and turn-off losses are affected by temperature. Turn-on characteristics with little influence and no knee voltage. Therefore, CoolSiC™ SiC MOSFETs are ideal for hard switching and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies, and DC-DC converters or DC-AC inverters.
Feature description
Outstanding switching and conduction losses
High threshold voltage, Vth > 4 V
0V turn-off gate voltage for simple gate drive
Wide gate-source voltage range
Robust low loss body diode for hard switching
Turn-off losses are less affected by temperature
.XT diffusion welding technology for best-in-class thermal performance
Application field
Uninterruptible Power Supply (UPS)
battery formation
Electric vehicle fast charging
Motor Control and Drive
Solar System Solutions
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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